63-8412-69 SIR668DP-T1-RE3 N-Channel MOSFET, 65 A, 100 V TrenchFET, 8-Pin SO Vishay SIR668DP-T1-RE3
Electronic/Electrical Parts and Controll Equipments

63-8412-69 SIR668DP-T1-RE3 N-Channel MOSFET, 65 A, 100 V TrenchFET, 8-Pin SO Vishay SIR668DP-T1-RE3

model: 63-8412-69
brand: Vishay

Product Description

Product Model: 63-8412-69Product Brand: Vishay Features […]

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Product Details

Product Model: 63-8412-69
Product Brand: Vishay

Features

  • N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:65 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:5.05 mΩ
  • Maximum Gate Threshold Voltage:3.4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SO
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:104 W
  • Typical Turn-On Delay Time:22 ns
  • CODE No.:134-9160

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