63-8399-65 IRF9362TRPBF Dual P-Channel MOSFET, 8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9362TRPBF
Electronic/Electrical Parts and Controll Equipments

63-8399-65 IRF9362TRPBF Dual P-Channel MOSFET, 8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9362TRPBF

model: 63-8399-65
brand: Infineon

Product Description

Product Model: 63-8399-65Product Brand: Infineon Featur […]

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Product Details

Product Model: 63-8399-65
Product Brand: Infineon

Features

  • Dual P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual P-channel configuration.

Spec

  • Quantity:1set(4000pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:8 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:32 mΩ
  • Maximum Gate Threshold Voltage:2.4V
  • Minimum Gate Threshold Voltage:1.3V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2 W
  • Typical Turn-Off Delay Time:115 ns
  • CODE No.:168-5982

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